thermal relaxation time

Starting from the contact resistance model, a functional relation between the thermal relaxation time and the interface thermal resistance as well as the thermal transport coefficients of materials is obtained.

从热阻模型出发，给出了弛豫时间常数与界面热阻以及材料热输运系数之间的函数关系。

The activation energy of thermal relaxation of dipoles for main-chain segmental motion in amorphous region was decreased linearly and the time constant of dipolar thermal relaxation was increased exponentially with increasing of crystallinity.

被冻结的分子主链段偶极热松弛活化能随结晶度增大线性减小，热松弛时间常数则随结晶度的提高而呈指数增大。

A pulse semiconductor laser was measured, and the thermal relaxation time was obtained to be 1.2 ms.

利用此方法对一种半导体激光器进行了测试，得到其热弛豫时间为1.2ms。

Adjusting the pulse width of the laser to the thermal relaxation time of the absorbing construction can avoid thermal side effects and facilitate a selective treatment of the selective cells.

把激光脉宽调整到与吸收颗粒的热弛豫时间一致可以避免热副作用，可对所选细胞产生选择性处理。

The thermal relaxation time of small drops and particles in air is quite short.

空气中小水滴和粒子的热张弛时间是非常短的。

The effects of moving heat source speed, temperature-dependent modulus of elasticity and thermal relaxation time on displacement and temperature are studied.

计算得到了杆内温度及位移的分布规律，分析了移动热源速度、弹性模量以及热松弛时间对温度和位移的影响。

According to the effects of thermal relaxation time and thermal relaxation length, the heat conduction was analyzed.

最后，依据热松弛时间和热松弛长度对热传导过程的影响，对快速瞬态高强度加热情况下的热传导问题进行了分析和讨论。

Measurement of Thermal Relaxation Time of High Power Semiconductor Lasers

大功率半导体激光器热弛豫时间的测量

It is found that temperature wave frequency at a given location in the slab is relevant to slab's thickness and its thermal relaxation time while the amplitude of temperature wave bears a relation with heat source's distribution area and pulse duration.

研究结果表明，温度波动频率取决于平板厚度和材料的热弛豫时间，而其幅值则与内热源释放区域的大小和脉冲宽度的长短有关。

The thermal relaxation time was calculated by the measured relation of peak moment of optical signal within the pulse varied with wavelength.

根据对应的峰值光功率出现时刻随波长变化的曲线，计算得到热弛豫时间参量值。